Exposure apparatus and method

Details Exposure apparatus and method Exposure apparatus and method

2005-04-29

2009-10-06

McPherson, John A (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S313000, C430S396000, C430S005000

Reexamination Certificate

active

07598020

ABSTRACT:
A production method of a semiconductor device which includes the steps of exposing a resist coated on a substrate of a semiconductor device by projecting a light pattern on the substrate of the semiconductor device through an object lens, developing the resist exposed by the light pattern to form a wafer pattern with the resist, and etching the substrate on which the wafer pattern with the resist is formed. In the step of exposing, the light pattern projected on the substrate is formed by excimer laser light which is emitted from an annular shaped light source and which is passed through a mask having a phase shifter.

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“Effect of Central Obscuration On Image Formation In Projection Lithography”, Yang et al, SPIE vol. 1264 Optical/Laser Microlithography (1990), pp. 477-485.

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