Exposure apparatus and exposure method using same

Details Exposure apparatus and exposure method using same Exposure apparatus and exposure method using same

2005-01-11

2005-01-11

Church, Craig E. (Department: 2882)

X-ray or gamma ray systems or devices

Specific application

Lithography

Reexamination Certificate

active

06842500

ABSTRACT:
An exposure apparatus (EA2) that uses X-ray radiation in a photolithographic process and can obtain various measurements regarding the X-ray radiation used, by obtaining and analyzing readings of the photoelectric effect on various reflective surfaces (5, 60a, 60b, 7, 7a, 9a, 9b, 9cand9d) or optical elements (50aand51). With the measurements of the X-ray radiation, the exposure apparatus can control the exposure dose during the mask (8) and wafer (10) illumination process. The exposure system also has the ability to detect deformation in the mirrors (9a, 9b, 9cand9d) of the projection optical system caused by heat generated by absorption of the X-ray radiation. This is accomplished by analyzing the photoelectric effect occurring on the mirror surfaces and correcting the deformation of the mirrors based on this analysis.

REFERENCES:
patent: 5222112 (1993-06-01), Terasawa et al.
patent: 5606586 (1997-02-01), Amemiya et al.
patent: 6504896 (2003-01-01), Miyake et al.
patent: A-63-72116 (1988-04-01), None
patent: A-5-288696 (1993-11-01), None
patent: A-8-15499 (1996-01-01), None

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