Exposure apparatus and device manufacturing method using the sam

X-ray or gamma ray systems or devices – Specific application – Lithography

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

378206, H01L 2130

Patent

active

059303247

ABSTRACT:
An exposure apparatus for exposing a wafer to a mask with radiation light to thereby transfer a pattern of the mask onto the wafer, includes a light emitting portion for emitting the radiation light, a stepper major assembly having a wafer stage portion for holding the wafer and being supported by a supporting system separate from the light emitting portion, an alignment measuring portion for alignment measurement for the wafer and the mask and being supported by a supporting system separate from the stepper major assembly, and a correcting system for correcting attitude of the alignment measuring portion with respect to an optical axis of the radiation light.

REFERENCES:
patent: 5112133 (1992-05-01), Kurosawa et al.
patent: 5123036 (1992-06-01), Uno et al.
patent: 5125014 (1992-06-01), Watanabe et al.
patent: 5134640 (1992-07-01), Hirokawa et al.
patent: 5172402 (1992-12-01), Mizusawa et al.
patent: 5285488 (1994-02-01), Watanabe et al.
patent: 5317615 (1994-05-01), Ebinuma et al.
patent: 5347561 (1994-09-01), Ebinuma
patent: 5377251 (1994-12-01), Mizusawa et al.
patent: 5398271 (1995-03-01), Nishida et al.
patent: 5600698 (1997-02-01), Terashima et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Exposure apparatus and device manufacturing method using the sam does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Exposure apparatus and device manufacturing method using the sam, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Exposure apparatus and device manufacturing method using the sam will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-888272

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.