Exhaust system for an ion implanter

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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25044111, H01J 37317

Patent

active

057315922

ABSTRACT:
An exhaust system for an ion implanter includes an exhaust pump for removing remaining gases in an inner portion of the ion implanter, an exhaust duct for carrying the remaining gases from the exhaust pump to the outside of the exhaust system, and a gas introducing portion for introducing heated gases from a gas storage tank to the exhaust duct. Therefore, by-products on an inside of the exhaust duct are heated by the gases, such that a reaction between the remaining gases from the exhaust pump and the heated by-products is prevented. With the exhaust system, a corona discharge is not generated inside the exhaust duct, thereby preventing the exhaust duct from being burned out.

REFERENCES:
patent: 5308989 (1994-05-01), Brubaker
patent: 5312519 (1994-05-01), Sakai et al.

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