Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Reexamination Certificate
2006-08-11
2008-08-26
Culbert, Roberts (Department: 1792)
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
C156S345470
Reexamination Certificate
active
07416677
ABSTRACT:
An exhaust assembly is described for use in a plasma processing system, whereby secondary plasma is formed in the exhaust assembly between the processing space and chamber exhaust ports in order to reduce plasma leakage to a vacuum pumping system, or improve the uniformity of the processing plasma, or both. The exhaust assembly includes a powered exhaust plate in combination with a ground electrode is utilized to form the secondary plasma surrounding a peripheral edge of a substrate treated in the plasma processing system.
REFERENCES:
patent: 5983906 (1999-11-01), Zhao et al.
patent: 6899527 (2005-05-01), Quon et al.
patent: 2006/0037701 (2006-02-01), Koshiishi et al.
patent: 05047712 (1993-02-01), None
Culbert Roberts
Tokyo Electron Limited
Wood Herron & Evans L.L.P.
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