Coating apparatus – Gas or vapor deposition – With treating means
Patent
1996-01-17
1998-06-23
Garrett, Felisa
Coating apparatus
Gas or vapor deposition
With treating means
117 84, 118728, 4272487, H01L 21205
Patent
active
057699518
ABSTRACT:
A platen supports a wafer during the deposition of tungsten, metal nitrides, other metals, and silicides in a chemical vapor deposition reactor. A deposition control gas that includes a suitable inert gas such as argon or a mixture of inert and reactant gases such as argon and hydrogen is introduced through a restrictive opening into an ambient in the reactor. An exclusion guard aligned with the platen has an extension extending over a frontside peripheral region of the wafer. Deposition control gas is introduced under the exclusion guard extension and exits through a restrictive opening between the exclusion guard extension and a wafer frontside peripheral region. The restrictive opening provides a uniform pressure of deposition control gas at the edge and frontside of the wafer to prevent deposition on the wafer edge and backside.
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Benzing Jeffrey C.
Broadbent Eliot K.
Burkhart Christopher W.
Chin Barry L.
Lane Lawrence C.
Garrett Felisa
Steuber David E.
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