Excimer laser patterning of a novel resist

Details Excimer laser patterning of a novel resist Excimer laser patterning of a novel resist

1988-02-05

1988-10-25

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29846, 134 3, 156656, 1566611, 156666, 156668, 156902, 21912169, 21912185, 427 431, 427 531, 427 541, 428137, 4284111, 428432, 428596, B44C 122, C23F 102, B29C 3700, C03C 1500

Patent

active

047801778

ABSTRACT:
A dual layer resist configuration is employed for photopatterning high resolution conductive patterns on underlying polymeric or ceramic substrates, particularly substrates exhibiting surface roughness and non-planar design features such as channels, bosses and ridges. More particularly, a thin underlayer of ablatable photoabsorptive polymer is disposed on a metal coated substrate, after which a thicker layer of substantially transparent material is disposed over the polymer. A beam of laser energy, such as that produced by an ultraviolet excimer laser, is directed through the upper layer and is absorbed by the lower layer which is ablated and simultaneously removes the thick layer above it. This results in the ability to etch high resolution features on polymeric and other substrates, particularly copper coated polyetherimide circuit boards. The resist system is also applicable to VLSI wafers even though such wafers usually do not exhibit surface roughness on the scale generally considered herein. It is also equally applicable in various high density interconnect systems used for the direct connection of chip devices. A mask for patterning and a method for making it are also seen to be desirable because of the high laser energy densities generally desired for thorough ablation.

REFERENCES:
patent: 4414059 (1983-11-01), Blum et al.
patent: 4617085 (1986-10-01), Cole, Jr. et al.
patent: 4713518 (1987-12-01), Yamazaki et al.
Geis, M. W. et al., "Self-Developing Resist with Submicrometer Resolution and Processing Stability", Applied Physics Letters, 43(1) Jul. 1983, pp. 74-76.
Deutsch, T. F. et al., "Self-Developing UV Photoresist Using Excimer Laser Exposure", Journal of Applied Physics, 54(12) Dec. 1983, pp. 7201-7204.
"The KTI Connection", a brochure produced by KTI Chemicals, Inc. with an apparent date of Nov. 20, 1987.
Leitz-Image Micro Systems Co. product description literature for the ALPHA System with an apparent date of Jun. 13, 1986.
Leitz-Image Micro Systems Co. news release with an apparent date of Dec. 1, 1987.

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