Even nucleation between silicon and oxide surfaces for thin...

Details Even nucleation between silicon and oxide surfaces for thin... Even nucleation between silicon and oxide surfaces for thin...

2008-01-08

2008-01-08

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S298000, C257S410000, C257SE27084, C438S763000, C438S787000

Reexamination Certificate

active

11199471

ABSTRACT:
A semiconductor assembly providing even nucleation between silicon and oxide surfaces for growing uniformly thin silicon nitride layers used in semiconductor devices is disclosed. First, a nonconductive nitride-nucleation enhancing monolayer is formed over a semiconductor assembly having both nitridation receptive and resistive materials. For purposes of the present invention, a nitride-nucleation enhancing monolayer is a material that will readily accept the bonding of nitrogen atoms to the material itself. Next, a silicon nitride layer is formed over the nonconductive nitride-nucleation enhancing monolayer. The nonconductive nitride-nucleation enhancing monolayer provides even nucleation over both the nitridation receptive material and the nitridation resistive material for silicon nitride, thereby allowing for the growth of a uniformly thin nitride layer.

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