Evaluation of memory cell characteristics

Static information storage and retrieval – Floating gate – Particular biasing

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36518529, 365218, 36518521, 3651853, G11C 700

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active

059598913

ABSTRACT:
Techniques are used to evaluate margin of programmable memory cells. In particular, techniques are used to measure negative erased threshold voltage levels. Techniques are used to increase the longevity and reliability of memory cells by adjusting a window of memory cell operation.

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