Evaluation of memory cell characteristics

Static information storage and retrieval – Floating gate – Particular biasing

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36518501, 36518518, 36518514, 36518521, G11C 1606, G11C 702

Patent

active

060317639

ABSTRACT:
Techniques are used to evaluate margin of programmable memory cells. In particular, techniques are used to measure negative erased threshold voltage levels. Techniques are used to increase the longevity and reliability of memory cells by adjusting a window of memory cell operation.

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