Semiconductor device manufacturing: process – With measuring or testing – Optical characteristic sensed
Reexamination Certificate
2004-10-29
2008-12-16
Pert, Evan (Department: 2826)
Semiconductor device manufacturing: process
With measuring or testing
Optical characteristic sensed
C356S369000
Reexamination Certificate
active
07465591
ABSTRACT:
A structure having a number of traces passing through a region is evaluated by using a beam of electromagnetic radiation to illuminate the region, and generating an electrical signal that indicates an attribute of a portion (also called “reflected portion”) of the beam reflected from the region. The just-described acts of “illuminating” and “generating” are repeated in another region, followed by a comparison of the generated signals to identify variation of a property between the two regions. Such measurements can identify variations in material properties (or dimensions) between different regions in a single semiconductor wafer of the type used in fabrication of integrated circuit dice, or even between multiple such wafers. In one embodiment, the traces are each substantially parallel to and adjacent to the other, and the beam has wavelength greater than or equal to a pitch between at least two of the traces. In one implementation the beam is polarized, and can be used in several ways, including, e.g., orienting the beam so that the beam is polarized in a direction parallel to, perpendicular to, or at 45° to the traces. Energy polarized parallel to the traces is reflected by the traces, whereas energy polarized perpendicular to the traces passes between the traces and is reflected from underneath the traces. Measurements of the reflected light provide an indication of changes in properties of a wafer during a fabrication process.
REFERENCES:
patent: 3462602 (1969-08-01), Apple
patent: 3803413 (1974-04-01), Vanzetti et al.
patent: 3909602 (1975-09-01), Mioka
patent: 3930730 (1976-01-01), Laurens et al.
patent: 4201087 (1980-05-01), Akita et al.
patent: 4211488 (1980-07-01), Kleinknecht
patent: 4243327 (1981-01-01), Frosch et al.
patent: 4255971 (1981-03-01), Rosencwaig
patent: 4273421 (1981-06-01), Gurtler
patent: 4455741 (1984-06-01), Kolodner
patent: 4466748 (1984-08-01), Needham
patent: 4468136 (1984-08-01), Murphy et al.
patent: 4521118 (1985-06-01), Rosencwaig
patent: 4522510 (1985-06-01), Rosencwaig
patent: 4579463 (1986-04-01), Rosencwaig et al.
patent: 4632561 (1986-12-01), Rosencwaig et al.
patent: 4634290 (1987-01-01), Rosencwaig
patent: 4636088 (1987-01-01), Rosencwaig et al.
patent: 4710030 (1987-12-01), Tauc et al.
patent: 4750822 (1988-06-01), Rosencwaig et al.
patent: 4795260 (1989-01-01), Schuur et al.
patent: 4854710 (1989-08-01), Opsal et al.
patent: 4950990 (1990-08-01), Moulder et al.
patent: 4952063 (1990-08-01), Opsal et al.
patent: 4975141 (1990-12-01), Greco et al.
patent: 4996659 (1991-02-01), Yamaguchi et al.
patent: 5042951 (1991-08-01), Gold et al.
patent: 5042952 (1991-08-01), Opsal et al.
patent: 5074669 (1991-12-01), Opsal
patent: 5128864 (1992-07-01), Waggener et al.
patent: 5149978 (1992-09-01), Opsal et al.
patent: 5159412 (1992-10-01), Willenborg et al.
patent: 5181080 (1993-01-01), Fanton et al.
patent: 5228776 (1993-07-01), Smith et al.
patent: 5304931 (1994-04-01), Flamig et al.
patent: 5333050 (1994-07-01), Nose et al.
patent: 5377006 (1994-12-01), Nakata
patent: 5379109 (1995-01-01), Gaskill et al.
patent: 5408327 (1995-04-01), Geiler et al.
patent: 5430548 (1995-07-01), Hiroi et al.
patent: 5454004 (1995-09-01), Leger
patent: 5574562 (1996-11-01), Fishman et al.
patent: 5610392 (1997-03-01), Nagayama et al.
patent: 5631171 (1997-05-01), Sandstrom et al.
patent: 5652716 (1997-07-01), Battersby
patent: 5657754 (1997-08-01), Rosencwaig
patent: 5667300 (1997-09-01), Mandelis et al.
patent: 5706094 (1998-01-01), Maris
patent: 5741614 (1998-04-01), McCoy et al.
patent: 5761082 (1998-06-01), Miura-Mattausch
patent: 5764363 (1998-06-01), Ooki et al.
patent: 5790251 (1998-08-01), Hagiwara
patent: 5877860 (1999-03-01), Borden
patent: 5883518 (1999-03-01), Borden
patent: 5966019 (1999-10-01), Borden
patent: 5978074 (1999-11-01), Opsal et al.
patent: 6020964 (2000-02-01), Loopstra et al.
patent: 6049220 (2000-04-01), Borden et al.
patent: 6054868 (2000-04-01), Borden et al.
patent: 6081334 (2000-06-01), Grimbergen et al.
patent: 6118533 (2000-09-01), Banet et al.
patent: 6154280 (2000-11-01), Borden
patent: 6169601 (2001-01-01), Eremin et al.
patent: 6178020 (2001-01-01), Schultz et al.
patent: 6243199 (2001-06-01), Hansen et al.
patent: 6281027 (2001-08-01), Wei et al.
patent: 6323951 (2001-11-01), Borden et al.
patent: 6327035 (2001-12-01), Li et al.
patent: 6330361 (2001-12-01), Mitchell et al.
patent: 6336969 (2002-01-01), Yamaguchi et al.
patent: 6395563 (2002-05-01), Eriguchi
patent: 6400454 (2002-06-01), Noguchi et al.
patent: 6426644 (2002-07-01), Borden et al.
patent: 6483594 (2002-11-01), Borden et al.
patent: 6486965 (2002-11-01), Kim
patent: 6489624 (2002-12-01), Ushio et al.
patent: 6489801 (2002-12-01), Borden et al.
patent: 6525818 (2003-02-01), Yin et al.
patent: 6528333 (2003-03-01), Jun et al.
patent: 6559942 (2003-05-01), Hsieh et al.
patent: 6812047 (2004-11-01), Borden et al.
patent: 6958814 (2005-10-01), Borden et al.
patent: 2001/0015937 (2001-08-01), Yamaguchi et al.
patent: 2002/0126732 (2002-09-01), Shakouri et al.
patent: 2002/0186045 (2002-12-01), Cox
patent: 2003/0036231 (2003-02-01), Bhattacharva et al.
patent: 2003/0096436 (2003-05-01), Satya et al.
patent: 2003/0155927 (2003-08-01), Pinto et al.
patent: 0 622 624 (1994-11-01), None
patent: 0 718 595 (1996-06-01), None
patent: 05006929 (1993-01-01), None
patent: 2000009443 (2000-01-01), None
patent: WO 97/08536 (1997-03-01), None
patent: WO 99/64880 (1999-12-01), None
J. Opsal, “High Resolution Thermal Wave Measurements and Imaging of Defects and Damage in Electronic Materials” Photoacoustic and Photothermal Phenomena II, Springer Series in Optical Sciences, vol. 62, Springer Verlag Berlin, Heidelberg, 1990.
A. Rosencwaig, “Thermal Wave Measurement of Thin-Film Thickness”, 1986 American Chemical Society, pp. 182-191.
“Thin-Film Thickness Measurements with Thermal Waves”, Journal De Physique, Oct. 1983, pp. C6-483-C6-489.
W. L. Smith et al. “Thermal-wave Measurements and Monitoring of TaSIx Silicide Film Properties” J. Vac. Technol.B2(4), Oct.-Dec. 1984, pp. 710-713.
A. Salnick et al., “Nonlinear Fundamental Photothermal Response in 3D Geometry: Experimental Results for Tungsten”, (believe to be prior to Mar. 8, 2000).
S. Ameri et al., “Photo-Displacement Imaging”, Mar. 30, 1981, pp. 337-338.
L. Chen et al., “Thermal Wave Studies of Thin Metal Films Using the Meta-Probe-A New Generation Photothermal System” 25th Review of Progress in QNDE, Snowbird, UT Jul. 19-24, 1998, pp. 1-12.
P. Alpern and S. Wurm, “Modulated Optical Reflectance Measurements on Bulk Metals and Thin Metallic Layers”, J. Appl. Phys. 66(4), Aug. 15, 1989, pp. 1676-1679.
J. Opsal, “The Application of Thermal Wave Technology to Thickness and Grain Size Monitoring of Aluminum Films”, SPIE vol. 1596 Metalization Performance and Reliability Issues for VLSI and ULSI (1991), pp. 120-131.
A. Rosenwaig, “Process Control In IC Manufacturing With Thermal Waves”, Review of Progress in Quantitative Nondestructive Evaluation, vol. 9, 1990, pp. 2031-2037.
K. Fernaam, “Measurement of Aluminum Alloy Grain Size on Product Wafers and its Correlation to Device Reliability”, 1990 WLR Final Report, pp. 97-106.
B.C. Forget et al., “High Resolution AC Temperature Field Imaging”, Electronic Letters Sep. 25, 1997, vol. 33 No. 20, pp. 1688-1689.
C. Paddock et al., “Transient Thermoreflectance from Metal Films”, May 1986 vol. 11, No. 5 Optical Letters, pp. 273-275.
C. Paddock et al., “Transient Thermoreflectance from Metal Films”, J. Appl. Phys. 60(1), Jul. 1, 1986, pp. 285-290.
Per-Eric Nordail et al. “Photothermal Radiometry”, Physica Scripts, vol. 20, 659-662, 1979.
A. Rosenwaig, “Thermal Wave Monitoring and Imaging of Electronic Materials and Devices”, pp. 73-109.
W. Lee Smith et al., “Voids, Notches and Micros-cracks in A1 Metallization Detected by
Borden Peter G
Li Jiping
Applied Materials Inc.
Pert Evan
Suryadevara Omkar
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