EUV light source, EUV exposure system, and production method...

Radiant energy – Radiant energy generation and sources – With radiation modifying member

Reexamination Certificate

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C250S365000, C250S372000, C315S111210

Reexamination Certificate

active

07491955

ABSTRACT:
An Sn—Ga type alloy having a composition in which the atomic % of Sn is 15% or less is accommodated inside a heated tank4.The Sn alloy pressurized by the pressurizing pump is conducted to a nozzle1,so that a liquid-form Sn alloy is caused to jet from the tip end of this nozzle1disposed inside a vacuum chamber7.The liquid-form Sn alloy that is caused to jet from the nozzle1has a spherical shape as a result of surface tension, and forms a target2.Laser light generated by an Nd:YAG laser light source8disposed on the outside of the vacuum chamber7is focused by a lens9and introduced into the vacuum chamber7.The target2that is irradiated by the laser is converted into a plasma, and radiates light that includes EUV light.

REFERENCES:
patent: 6560313 (2003-05-01), Harding et al.
patent: 2002/0070353 (2002-06-01), Richardson
patent: 2003/0080302 (2003-05-01), Yashiro
patent: 2003/0194055 (2003-10-01), Mochizuki
patent: 2005/0167617 (2005-08-01), Derra et al.
patent: 2008/0087847 (2008-04-01), Bykanov et al.
patent: 2008/0179548 (2008-07-01), Bykanov et al.
patent: 2001-023795 (2001-01-01), None
patent: 2001-155670 (2001-06-01), None
patent: 2003-008124 (2003-01-01), None
patent: 2003-133100 (2003-05-01), None
patent: 2003-303696 (2003-10-01), None
patent: 2004-288517 (2004-10-01), None
patent: WO 00/19496 (2000-04-01), None
patent: WO 01/31678 (2001-05-01), None
patent: WO 02/46839 (2002-06-01), None
patent: WO 03/094581 (2003-11-01), None
Japanese Search Report dated Nov. 9, 2005 for International Application No. PCT/JP2005/012007.
Japanese Search Report dated Sep. 28, 2005 for International Application No. PCT/JP2005/011865.

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