Radiant energy – Ion generation – Arc type
Reexamination Certificate
2005-06-22
2010-06-22
Berman, Jack I (Department: 2881)
Radiant energy
Ion generation
Arc type
C250S424000, C250S425000, C250S492100, C250S492200, C250S493100, C250S494100, C250S50400H
Reexamination Certificate
active
07741616
ABSTRACT:
A liquid in which fine solid Sn particles are dispersed in a resin is accommodated inside the heated tank4. The resin pressurized by a pressurizing pump is conducted to a nozzle1, so that a liquid-form resin is caused to jet from the tip end of the nozzle1that is disposed inside a vacuum chamber7. The liquid-form resin which is caused to jet from the nozzle1assumes a spherical shape as a result of surface tension, and is solidified by being cooled in a vacuum, so that a solid-form target2is formed. A laser introduction window10used for the introduction of laser light is formed in the vacuum chamber7, and laser light generated from a laser light source8disposed on the outside of the vacuum chamber7is focused by a lens9and conducted into the vacuum chamber7, so that the target is converted into a plasma, thus generating EUV light.
REFERENCES:
patent: 6324255 (2001-11-01), Kondo et al.
patent: 6507641 (2003-01-01), Kondo et al.
patent: 6560313 (2003-05-01), Harding et al.
patent: 2002/0041368 (2002-04-01), Ota et al.
patent: 2002/0070353 (2002-06-01), Richardson
patent: 2002/0094063 (2002-07-01), Nishimura et al.
patent: 2002/0141536 (2002-10-01), Richardson
patent: 2003/0080302 (2003-05-01), Yashiro
patent: 2003/0194055 (2003-10-01), Mochizuki
patent: 2004/0108473 (2004-06-01), Melnychuk et al.
patent: 2004/0208286 (2004-10-01), Richardson
patent: 2005/0167617 (2005-08-01), Derra et al.
patent: 2001-023795 (2001-01-01), None
patent: 2001-155670 (2001-06-01), None
patent: 2003-008124 (2003-01-01), None
patent: 2003-133100 (2003-05-01), None
patent: 2003-303696 (2003-10-01), None
patent: 2004-288517 (2004-10-01), None
patent: WO 00/19496 (2000-04-01), None
patent: WO 01/31678 (2001-05-01), None
patent: WO 02/46839 (2002-06-01), None
patent: WO 02/46839 (2002-06-01), None
patent: WO 03/094581 (2003-11-01), None
patent: WO 2004/062050 (2004-07-01), None
patent: WO 2004062050 (2004-07-01), None
Japanese Search Report dated Nov. 9, 2005 for International Application No. PCT/JP2005/012007.
Japanese Search Report dated Sep. 28, 2005 for International Application No. PCT/JP2005/011865.
Berman Jack I
Chang Hanway
Finnegan Henderson Farabow Garrett & Dunner LLP
Nikon Corporation
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