ETOX cell having bipolar electron injection for substrate-hot-el

Details ETOX cell having bipolar electron injection for substrate-hot-el ETOX cell having bipolar electron injection for substrate-hot-el

1999-06-16

2000-05-09

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257548, H01L 2976, G11C 1400

Patent

active

060607424

ABSTRACT:
An ETOX cell that has improved injection of electrons from a forward biased deep n-well to p-well junction underneath the channel area of a triple-well ETOX cell during substrate hot electron (SHE) programming. The ETOX cell has a control gate, a floating gate, a deep n-well formed in the substrate, a buried n+ layer in the deep n-well, a p-well formed in the n-well and atop the buried n+ layer, a drain implant formed in the p-well, and a source implant formed in the p-well. The buried n+ layer enhances the parasitic bipolar action between the n+ source/drain (as collector), the p-well (as base), and the buried n+ layer (as emitter). The parasitic transistor amplifies the amount of seed electrons injected into the p-well, which in turn results in significantly faster programming of the ETOX cell.

REFERENCES:
patent: 5457652 (1995-10-01), Brahmbhatt
patent: 5822243 (1998-10-01), Shone
patent: 5828099 (1998-10-01), Van Dort et al.
patent: 5857425 (1999-02-01), Wong
patent: 5917751 (1999-06-01), Wakita
patent: 5929478 (1999-07-01), Parris et al.
patent: 6011293 (2000-01-01), Yazuriha et al.

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