Ethylene glycol etch for processes using metal silicides

Details Ethylene glycol etch for processes using metal silicides Ethylene glycol etch for processes using metal silicides

1984-11-23

1986-02-11

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

134 3, 156653, 156655, 252 793, 252 794, B44C 122, C03C 1500, C03C 2506, C23F 100

Patent

active

045697221

ABSTRACT:
A novel etchant which comprises a mixture of ethylene glycol and hydrofluoric acid, preferably buffered hydrofluoric acid, has been found to control the etch rate of refractory metal silicides, in particular titanium silicide, in a manner such that titanium silicide may be used in place of tantalum silicide for interconnects and gates in semiconductor integrated circuits.

REFERENCES:
patent: 3571913 (1971-03-01), Bodway et al.
patent: 3642549 (1972-02-01), Couture
patent: 4276557 (1981-06-01), Levinstein et al.
patent: 4364793 (1982-12-01), Graves
"Refractory Metal Silicides of Titanium . . . ", IEEE Trans. on Elec. Devices, vol. ED-27, No. 8, 8/80, S. Murarka et al., pp. 1409-1417.
"Refractory Metal Silicides for VLSI . . . ", J. Vac. Sci. Tech., vol. 19, No. 3, 9-10/81, A. Sinha, pp. 778-785.
"Composite TiSi.sub.2
+ Poly-Si . . . ", IEEE Trans. on Elec. Devices, vol. ED-29, No. 4, 4/82, K. Wang et al., pp. 547-553.
"Formation and Properties of TiSi.sub.2 . . . ", Thin Solid Films, vol. 100, 1983, A. Guldan et al., pp. 1-7.
"Refractory Metal Silicides:Thin-Film . . . ", IEEE Trans. on Elec. Devices, vol. ED-30, No. 11, 11/83, T. Chow et al., pp. 1480-1497.
"Reactive Ion Etching for Submicron . . . ", J. Vac. Sci. Tech. B, vol. 1, No. 4, 10-12/83, M. Zhang et al., pp. 1037-1042.
"Ion Beam Etching of Silicon . . . ", J. Electrochem. Soc., vol. 131, No. 2, J. Chinn et al., pp. 375-380.

Affiliated with

Also associated with

Rating

Ethylene glycol etch for processes using metal silicides does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ethylene glycol etch for processes using metal silicides, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ethylene glycol etch for processes using metal silicides will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1203722