Etchstop for integrated circuits

Details Etchstop for integrated circuits Etchstop for integrated circuits

1998-06-26

2000-07-18

Elms, Richard

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438643, 437195, 156643, H01L 214763

Patent

active

060906979

ABSTRACT:
A high-selectivity via etching process. The process includes the steps of: forming an etchstop layer 840 of a material selected from the group consisting of Ti--Al, Ti--Al--N, Ta--Al, Al--N, Ti--Al/Ti--N, Ti--Al--N/Ti--N, Ta--Al/Ti--N, and Ti--Al/Ti--Al--N; forming a dielectric layer over the etchstop layer; and etching the dielectric layer with a fluorine-bearing etchant.

REFERENCES:
patent: 4069096 (1978-01-01), Reinberg
patent: 4582564 (1986-04-01), Shanefield et al.
patent: 5231306 (1993-07-01), Meikle et al.
patent: 5360995 (1994-11-01), Graas
patent: 5504041 (1996-04-01), Summerfelt
patent: 5609927 (1997-03-01), Summerfelt et al.

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