Etching with electrostatically attracted ions

Details Etching with electrostatically attracted ions Etching with electrostatically attracted ions

2007-02-27

2007-02-27

Deo, Duy-Vu N. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S706000, C438S719000

Reexamination Certificate

active

10895733

ABSTRACT:
A technique comprises directing a plasma having at least first and second gasses at a substrate. The substrate is at least partially covered with at least the first and second layers. Ions of the first gas are electrostatically attracted towards the substrate. The second gas selectively etches the first layer relative to the second layer.

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