Etching techniques

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

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Details

156655, 156656, 156657, 1566591, 156662, 156664, 252 791, B44C 122, C03C 1500, C03C 2506, C23F 102

Patent

active

044989539

ABSTRACT:
A highly selective--greater than 100 to 1--etch for silicon, tantalum, tantalum silicide and tantalum nitride is achieved by using polyatomic halogen fluorides. The selectivity is achievable without employing plasmas or wet etching.

REFERENCES:
patent: 3669774 (1972-06-01), Dismukes
patent: 4314875 (1982-02-01), Flamm

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