Etching solutions containing ammonium fluoride and anionic sulfa

Details Etching solutions containing ammonium fluoride and anionic sulfa Etching solutions containing ammonium fluoride and anionic sulfa

1988-05-16

1989-10-03

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156657, 252 793, C09K 1308

Patent

active

048714224

ABSTRACT:
Etching solutions used to etch, for example, silicon dioxide coated substrates in the manufacture of integrated circuits comprise an aqueous solution of ammonium fluoride and a wetting amount of an anionic sulfate ester of alkylphenol polyglycidol ether. Preferred embodiments of the anionic sulfate esters of alkylphenol polyglycidol ethers may be represented by the formula: ##STR1## wherein R represents an alkyl group having from about 4 to about 12 carbon atoms, x is from about 3 to about 15, M represents H, an alkali metal, an alkaline earth metal, ammonium, or an amine, and y is from 0.2 to about 4. The etching solutions preferably contain hydrogen fluoride in a volume ratio of NH.sub.4 F to HF to from about 3:1 to about 50:1. The novel etching solutions of the present invention have excellent wetting characteristics and retain their wetting properties after extended periods of continuous filtration through sub-micron filters.

REFERENCES:
patent: 3181984 (1969-05-01), Tillis
patent: 3992235 (1976-11-01), Garbarini
patent: 4761245 (1988-08-01), Scardera et al.
Fluorad, Fluorochemical Surfactants, a Product Information Bulletin by 3M, 1982.

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