Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2006-12-05
2006-12-05
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S745000, C252S079100, C252S079400
Reexamination Certificate
active
07144817
ABSTRACT:
The disclosure relates to methods and solutions for precisely and rapidly etching a polyimide resin layer. Etching solutions of the present invention include 3–65% by weight of a diol containing 3 to 6 carbon atoms or a triol containing 4 to 6 carbon atoms, 10–55 % by weight of an alkali compound and water in an amount of 0.75–3.0 times the amount of the alkali compound, and can be used at 65° C. or more to rapidly etch a polyimide resin layer having an imidation degree of 50–98 % without unfavorably affecting the working atmosphere. Even if the resin layer is completely imidated after etching, the etching pattern of the resulting resin layer is not deformed with a decreased contamination by impurity ions as compared with those obtained using conventional etching solutions.
REFERENCES:
patent: 4369090 (1983-01-01), Wilson et al.
patent: 4426253 (1984-01-01), Kreuz et al.
patent: 4473523 (1984-09-01), Sasaki et al.
patent: 5004777 (1991-04-01), Hallden-Abberton et al.
patent: 5157055 (1992-10-01), Akagi et al.
patent: 5322976 (1994-06-01), Knudsen et al.
patent: 5441770 (1995-08-01), Rychwalski et al.
patent: 5441815 (1995-08-01), Li et al.
patent: 6218022 (2001-04-01), Suzuki et al.
patent: 6233821 (2001-05-01), Takahashi et al.
patent: 2002/0030178 (2002-03-01), Samukawa
patent: 1170474 (1998-01-01), None
patent: 1177751 (1998-04-01), None
patent: 1258187 (2000-06-01), None
patent: 58-103531 (1983-06-01), None
patent: 6-234870 (1994-08-01), None
patent: 11-209754 (1999-08-01), None
First Office Action from the Patent Office of the People's Republic of China dated Apr. 16, 2004 (3 pages).
Patent Abstracts of Japan No. 11-209754 dated Aug. 3, 1999 (1 page).
Patent Abstracts of Japan No.: 06-234870 dated Aug. 23, 1994 (1 page).
Norton Nadine G.
Osha & Liang LLP
Sony Chemicals Corp.
Sony Corporation
Umez-Eoninin Lynette T.
LandOfFree
Etching solutions and processes for manufacturing flexible... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Etching solutions and processes for manufacturing flexible..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Etching solutions and processes for manufacturing flexible... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3718295