Etching solution, etching method and method for...

Details Etching solution, etching method and method for... Etching solution, etching method and method for...

2006-04-25

2006-04-25

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S622000

Reexamination Certificate

active

07033943

ABSTRACT:
An etching solution includes an anticorrosive for copper or a benzotriazole based anticorrosive in a hydrofluoric acid aqueous solution. An etching method makes use of the etching solution set out above. Moreover, a method for manufacturing a semiconductor device which should include the step of removing copper by the etching method. The method includes the steps of forming copper through a barrier layer made of a metal or metal compound, which is greater in ionization tendency than copper, so as to bury a wiring groove formed in an insulating film with the copper, followed by polishing additional copper and barrier layer formed on the insulating film, and etching a surface layer of the insulating film by use of the etching solution to remove an insulating defective layer made mainly of the barrier layer on the insulating film along with the surface layer of the insulating film.

REFERENCES:
patent: 6716749 (2004-04-01), Noguchi et al.

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