Etching solution and etching method for semiconductors and metho

Details Etching solution and etching method for semiconductors and metho Etching solution and etching method for semiconductors and metho

1994-03-18

1995-11-21

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566551, 1566621, 252 791, H01L 2100, C09K 1300

Patent

active

054683432

ABSTRACT:
An etchant includes a mixture of an organic acid, hydrogen peroxide, and a base added to adjust the pH. The etching solution has an eminent difference in the etching rates between GaAs and AlGaAs, GaAs and InGaAs, AlGaAs and InGaAs, InGaAs and AlGaAs, and InGaAs and GaAs. High selectivity etching is completed easily and with high precision. Precise control of etching of a heterostructure is achieved.

REFERENCES:
patent: 4814293 (1989-03-01), Van Oekel
Broekaert et al, "Novel, organic acid-based etchants for InGaAlAs/InP heterostructure devices with AlAs etch-stop layers", J. Electrochem. Soc. (USA), vol. 139, No. 8, pp. 2306-2309, Aug. 1992.

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