Etching solution and etching method for semiconductors

Details Etching solution and etching method for semiconductors Etching solution and etching method for semiconductors

1993-11-22

1995-05-30

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

252 791, C09K 1300, H01L 2100

Patent

active

054198089

ABSTRACT:
An etchant includes an organic acid and hydrogen peroxide mixed in a volume ratio of 1:1 to 200:1 with a basic material added to adjust the pH. The etching solution presents an eminent difference in the etching rates between GaAs/AlGaAs, GaAs/InGaAs, AlGaAs/InGaAs, InGaAs/AlGaAs, and InGaAs/GaAs. High selectivity etching is completed easily and with high precision. Precise control of etching of a heterostructure is achieved.

REFERENCES:
patent: 4814293 (1989-03-01), Van Oekel
patent: 5110765 (1992-05-01), Bilakanti et al.
Broekaert et al, "Novel, Organic Acid-Based Etchants for InGaAlAs/InP heterostructure Devices with AlAs Etch-Stop layers", J. Electro Chem. Soc., vol. 139, No. 8, pp. 2306-2309, Aug. 1992.
DeSalvo et al, "Etch Rates and Selectivities of Citric Acid/Hydrogen Peroxide on GaAs, Al.sub.0.3 Ga.sub.0.7 As, In.sub.0.2 Ga.sub.0.8 As, In.sub.0.53 Ga.sub.0.47 As, In.sub.0.52 Al.sub.0.48 As, and InP", J. Electrochem. Soc., vol. 139, No. 3, pp. 831-835, Mar. 1992.
LePore, "An Improved Technique For Selective Etching . . . ", Journal of Applied Physics, vol. 51, No. 12, 1980, pp. 6441-6442.
Hill et al, "Two Selective Etching Solutions For GaAs On InGaAs and GaAs/AlGaAs on InGaAs", Journal of the Electrochemical Society, vol. 137, No. 9, 1990, pp. 2912-2914.
Logan et al., "Optical Waveguide In GaAs-AlGaAs Epitaxial Layers", Journal of Applied Physics, vol. 44, No. 9, 1973, pp. 4172-4176.
Tonobe et al., "Etching and Optical Characteristics in GaAs/GaAlAs Surface Emitting Laser Fabrication Using a Novel Etch," Japanese Journal of Applied Physics., vol. 31, No. 5B, May 1992, Tokyo, Japan, pp. 1597-1601.

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