Etching silicon-containing materials by use of silicon-containin

Details Etching silicon-containing materials by use of silicon-containin Etching silicon-containing materials by use of silicon-containin

1995-08-24

1998-01-06

Niebling, John

Fishing, trapping, and vermin destroying

1566431, 1566461, 1566501, 1566571, H01L 21469

Patent

active

057054339

ABSTRACT:
During the etching of a silicon-containing material using a halogen-containing etch gas, a silicon-hydride gas is added to the etch gas to provide increased sidewall protection during the etch. Suitably up to about 50 percent by volume of a silicon-containing gas such as silane is added to improve anisotropy of the etch and to prevent notching at the silicon-substrate interface.

REFERENCES:
patent: 4411734 (1983-10-01), Maa
patent: 4778563 (1988-10-01), Stone
patent: 5007982 (1991-04-01), Tsou
patent: 5242536 (1993-09-01), Schoenborn
patent: 5310456 (1994-05-01), Kadomura
patent: 5314576 (1994-05-01), Kadomura
patent: 5354421 (1994-10-01), Tatsumi et al.
patent: 5368686 (1994-11-01), Tatsumi et al.
patent: 5436424 (1995-07-01), Nakayama et al.

Affiliated with

Also associated with

Rating

Etching silicon-containing materials by use of silicon-containin does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Etching silicon-containing materials by use of silicon-containin, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Etching silicon-containing materials by use of silicon-containin will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2328811