Etching pyroelectric devices post ion milling

Details Etching pyroelectric devices post ion milling Etching pyroelectric devices post ion milling

1995-02-15

1996-05-28

Powell, William

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

1566421, 1566481, 1566491, 1566511, 216 57, 216 80, 216 97, B44C 122, C03C 1500

Patent

active

055202993

ABSTRACT:
This is a system and method of etching pyroelectric devices post ion milling. The method may comprise: forming a mask 32 for thermal isolation trenches on a substrate 14; ion milling thermal isolation trenches 40 in the substrate 14; and etching undesired defects 44 caused by the ion milling by applying a dry etch, a solvent etch, or a liquid etch to the trenches. The etch may include: hydrofluoric acid, perchloric acid, a solution of a chlorine salt and water which is then exposed to ultraviolet light or any similar chemical solution giving the correct reducing properties. The mask 32 and ion milling may be applied from either the front side or the back side of the infrared detector.

REFERENCES:
patent: 2927771 (1990-05-01), Ferrett
patent: 4080532 (1978-03-01), Hopper
patent: 4593456 (1986-06-01), Cheung
patent: 4745278 (1988-05-01), Hanson
patent: 4792681 (1988-12-01), Hanson

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