Etching processes using C 4 F 8 for silicon dioxide and CF...

Details Etching processes using C 4 F 8 for silicon dioxide and CF... Etching processes using C 4 F 8 for silicon dioxide and CF...

2007-10-02

2007-10-02

Tran, Binh X. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S724000, C438S734000, C438S742000, C438S743000, C438S744000

Reexamination Certificate

active

11163836

ABSTRACT:
Methods of etching a dielectric layer and a cap layer over a conductor to expose the conductor are disclosed. In one embodiment, the methods include the use of a silicon dioxide (SiO2) etching chemistry including octafluorocyclobutane (C4F8) and a titanium nitride (TiN) etching chemistry including tetrafluoro methane (CF4). The methods prevent etch rate degradation and exhibit reduced electro-static discharge (ESD) defects.

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