Etching process of silicon material

Details Etching process of silicon material Etching process of silicon material

1991-08-07

1993-04-06

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156657, 437193, 437200, H01L 2100

Patent

active

052000281

ABSTRACT:
A process is disclosed for etching a silicon-based structure comprised of a silicon layer and a high-melting silicide layer. Good shaping results from etching of the two layers with use of two gaseous mixtures having their respective different ratios of a hydrogen bromide gas and a fluorine radical-donating gas. Separate etching is possible of the silicon layer with a hydrogen bromide gas and of the silicide layer with a gaseous mixture of the above type. A silicon-containing layer is also etched with a hydrogen gas alone with the end point of etching being precisely detected.

REFERENCES:
patent: 4490209 (1984-12-01), Hartman
patent: 4778563 (1988-10-01), Stone
patent: 4799991 (1989-01-01), Dockrey
patent: 4919749 (1990-04-01), Mauger et al.
patent: 5007982 (1991-04-01), Tsou
patent: 5013398 (1991-05-01), Long et al.

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