Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-05-03
2005-05-03
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S700000, C438S622000, C438S629000, C438S696000, C438S735000, C257SE23149
Reexamination Certificate
active
06887785
ABSTRACT:
A semiconductor device with openings of differing depths in a substrate or layer is described, as are related methods for its manufacture. Through selective deposition of a single mask layer, whereby low aspect ratio openings are substantially coated while high aspect ratio are at most partially coated, subsequent etching of the substrate or layer is restricted to uncoated portions of the high aspect ratio openings. The result is a substrate or layer with openings of more than one depth using a single mask layer. In a second embodiment, the selective deposition of a single mask layer is utilized to etch a layer while protecting underlying structures from etching. In a third embodiment, the selective deposition of a single mask layer is utilized to etch an opening into a layer wherein the opening has a sub-lithographic diameter, i.e., the diameter of the opening is smaller than can be achieved with the particular lithographic technique employed.
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Dobuzinsky David M.
Iggulden Roy C.
Radens Carl J.
Strane Jay W.
Wong Keith K. H.
Cioffi James J.
Fourson George
Hoffman Warnick & D'Alessandro LLC
Pham Thanh V
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