Etching of tantalum silicide/doped polysilicon structures

Details Etching of tantalum silicide/doped polysilicon structures Etching of tantalum silicide/doped polysilicon structures

1982-12-09

1983-10-25

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29571, 29580, 134 1, 156646, 156651, 156656, 156657, 1566591, 156662, 204192EC, 204192E, 252 791, 427 85, 427 86, 427 93, H01L 21306, B44C 122, C03C 1500, C23F 102

Patent

active

044117345

ABSTRACT:
A method of forming and anisotropically etching a structure on a substrate, said structure being comprised of a layer of doped polycrystalline silicon having thereover a layer of tantalum silicide. The method comprises providing a layer of polycrystalline silicon on the substrate, doping the silicon to render it conductive, preparing the surface of the silicon for deposition of tantalum silicide by treatment with a carbon tetrafluoride/oxygen plasma, depositing tantalum silicide thereon tantalum rich, anisotropically plasma etching the two-layered structure with an etchant mixture of carbon tetrachloride, oxygen and nitrogen, annealing the tantalum silicide layer and, if desired, covering the resultant structure with a protective layer of oxide. In a preferred embodiment, the silicon layer is deposited in the amorphorus state and annealed to the polycrystalline state.

REFERENCES:
patent: 4141022 (1979-02-01), Sigg et al.
patent: 4285761 (1981-08-01), Fatula, Jr. et al.
patent: 4332839 (1982-06-01), Levinstein et al.
patent: 4362597 (1982-12-01), Fraser et al.
Pure and Applied Chemistry, vol. 52, pp. 1759-1765 (1980).

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