Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2008-07-01
2008-07-01
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S694000, C438S697000, C257SE21245, C257SE21305
Reexamination Certificate
active
11227703
ABSTRACT:
The present invention relates to a method for the patterning of a stack of layers on a surface with high topography. A method of the present invention can be used for gate patterning for multiple Gate FETs (MuGFETs), for patterning of the control gate in non-volatile memory applications, and for the patterning of the poly emitter in BiCMOS devices. The present invention also relates to a device prepared by a method of the invention.
REFERENCES:
patent: 4601781 (1986-07-01), Mercier et al.
patent: 5402002 (1995-03-01), Meister et al.
patent: 5418176 (1995-05-01), Lee et al.
patent: 5792694 (1998-08-01), Park
patent: 6028362 (2000-02-01), Omura
patent: 6277754 (2001-08-01), Wang et al.
patent: 6426558 (2002-07-01), Chapple-Sokol et al.
patent: 6787476 (2004-09-01), Dakshina-Murthy et al.
patent: 2003/0073303 (2003-04-01), Iida et al.
patent: 2004/0023500 (2004-02-01), Dokumaci et al.
patent: 2004/0048472 (2004-03-01), Wieczorek et al.
patent: 2004/0248396 (2004-12-01), Iida et al.
patent: 2004/0265745 (2004-12-01), Sho et al.
patent: 2005/0079702 (2005-04-01), Popp et al.
Yang, et al. 5nm-Gate Nanowire FinFET, 2004 Symposium on VLSI Technology Digest of Technical Papers. pp. 196-197.
European Search Report for related Eurpoean Application No. EP 05447052.1, mailed on Feb. 8, 2006.
Interuniversitair Microelektronica Centrum (IMEC vzw)
Knobbe Martens Olson & Bear LLP
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