Etching of silicon dioxide selectively to silicon nitride and po

Details Etching of silicon dioxide selectively to silicon nitride and po Etching of silicon dioxide selectively to silicon nitride and po

1993-12-16

1996-04-09

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566431, 1566461, 437225, H01L 2100

Patent

active

055058167

ABSTRACT:
Silicon dioxide on a substrate is directionally etched using a hydrogen halide plasma which is created within an etch chamber. The method selectively etches silicon dioxide relative to polysilicon and silicon nitride. A substrate and the combination of NH.sub.3 and NF.sub.3 gases or the combination of CF.sub.4 and O.sub.2 gases mixed with H.sub.2 and N.sub.2 gases are located within an etch chamber. An electrical field is created within the etch chamber causing the gas mixture to form a plasma. The negative charge at the bottom of the chamber attracts the positively charged plasma, thereby etching the substrate in the downward direction. The result is an anisotropic product. The method is also shown to be effective in non-selectively etching thermal and deposited oxides, resulting in a similar etch rate for the different types of oxides.

REFERENCES:
patent: 4352724 (1982-10-01), Sugishima et al.
patent: 4615764 (1986-10-01), Bobbio et al.
patent: 4711698 (1987-12-01), Douglas
patent: 4807016 (1989-02-01), Douglas
patent: 5030319 (1991-07-01), Nishino et al.
patent: 5122225 (1992-06-01), Douglas
patent: 5128744 (1992-07-01), Asano et al.
patent: 5173151 (1992-12-01), Namose
patent: 5230772 (1993-07-01), Kadomura
patent: 5282925 (1994-02-01), Jeng et al.
"Plasma Chemical Aspects of Magnetron Ion Etching with CF.sub.4 /O.sub.2 and CF.sub.4 /H.sub.2.sup.h "; Plasma Processing and Synthesis of Materials; Material Research Soc; XVL; 1987; abstract only; Bright et al.

Affiliated with

Also associated with

Rating

Etching of silicon dioxide selectively to silicon nitride and po does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Etching of silicon dioxide selectively to silicon nitride and po, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Etching of silicon dioxide selectively to silicon nitride and po will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-136293