Etching of materials in a noncorrosive environment

Details Etching of materials in a noncorrosive environment Etching of materials in a noncorrosive environment

1990-09-24

1991-11-26

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156656, 156657, 156662, 156665, 20419235, 20419237, 437234, 437245, H01L 21306, B44C 122, C23F 100

Patent

active

050680072

ABSTRACT:
A method for plasma etching semiconducting composed of III-V and related materials is provided. Enhanced removal rates, greater volatility, and reduced etch initiation time is provided by exposing the semiconductor to a plasma of methane, hydrogen, and at least one of trialkylboron, trimethylboron, or triethylboron.

REFERENCES:
patent: 4671847 (1987-06-01), Clawson
patent: 4925813 (1990-05-01), Autier et al.

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