Etching of dielectric layers with electrons in the presence of s

Details Etching of dielectric layers with electrons in the presence of s Etching of dielectric layers with electrons in the presence of s

1986-01-17

1987-07-14

Lindsay, Robert L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

291584, 291590, 156646, 156653, 156656, 156657, 156662, C03C 1500, C23F 102

Patent

active

046800875

ABSTRACT:
In the manufacture of semiconductor components, direct etching is effected using electrons. In a specific application an electron beam may be used to directly etch a pattern in a dielectric layer in an atmosphere of low pressure sulfur hexafluoride. The technique involves a simpler alternative to the more typical microcircuit manufacturing processes in which dielectric layers such as silicon dioxide, silicon nitride or silicon oxynitride are etched by either plasma or wet chemical techniques through a photoresist mask. The latter invariably involves a large number of process steps. The disclosed method presents a simpler alternative in which the silicon dioxide, for example, is patterned directly and which may be particularly suited to very small (sub-micron) geometries or to more conventional geometries if a high intensity electron flood exposure system is used.

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