Etching of a phosphosilicate glass film selectively implanted wi

Details Etching of a phosphosilicate glass film selectively implanted wi Etching of a phosphosilicate glass film selectively implanted wi

1985-07-29

1987-01-06

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156644, 156653, 156657, 1566591, 156663, B44C 122, C03C 1500, C03C 2506

Patent

active

046344942

ABSTRACT:
The etch rate of phosphosilicate glass becomes lowered as boron ions are implanted therein. In accordance with the principle of the present invention, boron ions are implanted into a phosphosilicate glass film selectively in location or concentration and the thus boron-implanted phosphosilicate glass film is etched by an etchant, for example buffered hydrofluoric acid solution, to etch an intended portion of the phosphosilcate glass film preferentially thereby defining a hole, such as a contact hole, or substantially flat surface.

REFERENCES:
patent: 3560280 (1971-02-01), Nishida
patent: 4552831 (1985-11-01), Liu

Affiliated with

Also associated with

Rating

Etching of a phosphosilicate glass film selectively implanted wi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Etching of a phosphosilicate glass film selectively implanted wi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Etching of a phosphosilicate glass film selectively implanted wi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-682676