Etching methods of silicon nitride films employed in microelectr

Details Etching methods of silicon nitride films employed in microelectr Etching methods of silicon nitride films employed in microelectr

1999-09-08

2000-03-14

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

438757, 252 791, 252 792, H01L 2100

Patent

active

060372699

ABSTRACT:
Aqueous compositions for etching silicon nitride films present on wafers used in microelectronic devices comprise hydrogen fluoride and phosphate. Methods for etching silicon nitride films present in wafers to be used in microelectronic devices comprise exposing the wafers to the aqueous compositions.

REFERENCES:
patent: 3867272 (1975-02-01), Rust et al.
patent: 3923562 (1975-12-01), Dhanka
patent: 5472562 (1995-12-01), Ziger

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