Etching method using NH.sub.4 F solution to make surface of sili

Details Etching method using NH.sub.4 F solution to make surface of sili Etching method using NH.sub.4 F solution to make surface of sili

1995-05-25

1997-07-22

Wright, Lee C.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

205656, 205657, 205683, C25F 312

Patent

active

056500432

ABSTRACT:
A silicon substrate is etched by dipping it in a NH.sub.4 F solution while charging it with a potential more negative than an open-circuit potential. The NH.sub.4 F solution preferably has NH.sub.4 F concentration of 10M or less. The potential applied to the silicon substrate is controlled within the range of from the open-circuit potential to a more negative potential by -1.5 V vs. SCE. Since the etched silicon substrate has flatness in atomic order, it is suitable for the precise fabrications to manufacture high-density ir high-functional semiconductor devices.

REFERENCES:
patent: 4482443 (1984-11-01), Bacon et al.
patent: 5348627 (1994-09-01), Propst et al.
Itaya et al., "Atomic resolution images of H-terminated Si(111) surfaces in aqueous solutions", 18 May 1992, Appl. Phys. Lett., vol. 60, No. 20, pp. 2534-2536.

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