Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2011-06-14
2011-06-14
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S689000, C438S692000, C438S754000, C257SE21245, C257SE21246
Reexamination Certificate
active
07960289
ABSTRACT:
An etching method is provided in which selective etching can be carried out for an amorphous oxide semiconductor film including at least one of gallium and zinc, and indium. In the etching method, the selective etching is performed using an alkaline etching solution. The alkaline etching solution contains especially ammonia in a specific concentration range.
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Canon Kabushiki Kaisha
Chang Leonard
Fitzpatrick ,Cella, Harper & Scinto
Ghyka Alexander G
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