Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1998-08-20
1999-11-30
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438719, 438720, 438725, H01L 21302, H01L 213065
Patent
active
059942320
ABSTRACT:
An etching method includes providing a first surface and a second surface with the second surface lying substantially vertical to the first surface. A material is provided over at least a portion of the first and second surface. The material is anisotropically etched from at least the first surface resulting in a blocking material formed over at least a portion of the material on the second surface. The blocking material is removed and the portion of the material formed over the second surface is isotropically etched. The blocking material may be a polymer material, and the removing step may include oxidizing the polymer material.
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Micro)n Technology, Inc.
Powell William
Umez-Eronini Lynette T.
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