Etching method for the manufacture of a semiconductor integrated

Details Etching method for the manufacture of a semiconductor integrated Etching method for the manufacture of a semiconductor integrated

1986-01-28

1988-05-03

Lindsay, Robert L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 204298, 20419232, 20419235, 219121PH, C03C 506

Patent

active

047418001

ABSTRACT:
A dry etching method for use in the manufacture of a semiconductor integrated circuit using an etching apparatus which is provided with an exciting chamber into which a reactive gas is introduced and an etching chamber which communicates with the reactive gas exciting chamber in which a substrate to be etched is placed, wherein the reactive gas is excited by microwave energy and then the excited reactive gas is introduced into the etching chamber where the excited reactive gas is re-excited by light energy, preferably of the wavelength of the range 180-400 nm, where the re-excited reactive gas is passed over the substrate during the etching thereof.

REFERENCES:
patent: 4380488 (1983-04-01), Reichelderfer et al.
patent: 4522674 (1985-06-01), Ninomiya et al.
patent: 4540466 (1985-09-01), Nishizawa
patent: 4575408 (1986-03-01), Bok

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