Etching method for silicon containing layer

Details Etching method for silicon containing layer Etching method for silicon containing layer

1995-01-30

1996-10-01

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566621, 437233, H01L 2100

Patent

active

055608043

ABSTRACT:
In plasma-etching a polysilicon layer of a semiconductor wafer where the polysilicon layer is formed on an SiO.sub.2 film, plasma of a processing gas including a halogen element containing gas and a gas containing oxygen or nitrogen is generated, and a predetermined portion of the polysilicon layer is selectively exposed in plasma, thereby etching the portion.

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"Highly Selective Reactive Ion Etching of Polysilicon with Hydrogen Bromide"; Tson; Journal of the Electrochemical Society (Oct. 1989); vol. 136, No. 10, abstract.

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