Etching method for semiconductor element

Details Etching method for semiconductor element Etching method for semiconductor element

2011-05-31

2011-05-31

Pert, Evan (Department: 2893)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S626000

Reexamination Certificate

active

07951707

ABSTRACT:
An etching method for semiconductor element is provided. The etching method includes the following procedure. First, a to-be-etched substrate is provided. Then, a silicon-rich silicon oxide (SRO) layer is formed on the to-be-etched substrate. Afterwards, an anti-reflective layer is formed on the SRO layer. Then, a patterned photo resist layer is formed on the anti-reflective layer. Afterwards, the anti-reflective layer, the SRO layer and the to-be-etched substrate is etched so as to form an opening.

REFERENCES:
patent: 5880018 (1999-03-01), Boeck et al.
patent: 6495450 (2002-12-01), Iyer et al.
patent: 6541367 (2003-04-01), Mandal
patent: 6586820 (2003-07-01), Yin et al.
patent: 2008/0173976 (2008-07-01), Stamper et al.

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