Etching method for producing an electrochemical cell in a crysta

Details Etching method for producing an electrochemical cell in a crysta Etching method for producing an electrochemical cell in a crysta

1987-07-15

1988-08-23

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156651, 156653, 156657, 1566611, 156662, 204242, 357 55, 357 65, 429122, 437203, 437228, H01L 21306, B44C 122, C03C 1500, C23F 102

Patent

active

047658649

ABSTRACT:
A method is set forth of constructing an electrochemical cell from a crystalline slab having front and back sides facing generally away from one another. Masking layers are provided covering the front and back sides of the slab and a back resist layer is provided covering the front masking layer, the front and resist layer having at least one opening therethrough exposing a portion of the masking layer therebehind. A passage is etched through the exposed part of the back masking layer and extending into the slab to terminate at the front masking layer. A conductor is deposited in the passage. A second front masking layer is formed covering the front side other than where the passage terminates. The masking layers are etched away opposite the passage sufficiently to expose the conductor. The technology provides electrochemical cells either on or completely below the surface of a slab, for example a silicon slab. Integrated circuitry can be provided on the side of the slab removed from the electrochemistry. A multiplicity of cells can be produced simultaneously on a single slab.

REFERENCES:
patent: 4234361 (1980-11-01), Guckel et al.
patent: 4381341 (1983-04-01), Przybysz et al.
patent: 4455561 (1984-06-01), Boyden et al.
patent: 4601777 (1986-07-01), Hawkins et al.

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