Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-07-08
2008-07-08
Deo, Duy-Vu N (Department: 1792)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S158000, C438S745000, C438S754000
Reexamination Certificate
active
11690137
ABSTRACT:
An etching process of a metal layer of a display panel is provided. First, a substrate with at least one display panel region, a testing device region, and a non-device region is provided. Then, a metal layer is formed over the substrate to cover the display panel region, the testing device region, and the non-device region. Next, a mask is formed on the metal layer to expose a portion of the metal layer. The area of the metal layer exposed by the mask substantially occupies 70%˜88% of the total area of the metal layer. Thereafter, a wet etching process is performed to remove the metal layer exposed by the mask.
REFERENCES:
patent: 5668650 (1997-09-01), Mori et al.
patent: 6218821 (2001-04-01), Bisbee
patent: 6297161 (2001-10-01), Sah
patent: 6762802 (2004-07-01), Ono et al.
patent: 2004/0004220 (2004-01-01), Suzuki
patent: 2005/0170564 (2005-08-01), Lai
patent: 2006/0099747 (2006-05-01), Park
patent: 584914 (2004-04-01), None
patent: 586223 (2004-05-01), None
Chen Yi-Chun
Jan Shiun-Chang
Lu Yi
Shan Yi-Ming
Au Optronics Corporation
Deo Duy-Vu N
Jianq Chyun IP Office
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