Etching a substrate: processes – Forming or treating electrical conductor article
Reexamination Certificate
2004-01-23
2008-03-04
Alanko, Anita K (Department: 1765)
Etching a substrate: processes
Forming or treating electrical conductor article
C216S038000, C216S057000, C216S067000, C216S079000, C216S083000, C216S099000, C438S254000, C438S397000, C438S690000, C438S704000, C438S719000, C438S745000, C438S753000, C438S756000
Reexamination Certificate
active
07338610
ABSTRACT:
A wafer having a dielectric layer and an electrode partially protruding from the top surface of the dielectric layer is provided. The dielectric layer is etched with a chemical solution such as LAL. Prior to etching, the protruding portion of the electrode is removed or reduced to prevent any bubbles included in the chemical solution from adhering to the electrode. Thus, the chemical solution can etch the dielectric layers without being blocked by any bubbles included in a chemical solution.
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Hwang In-Seak
Ko Yong-Sun
Lee Won-Jun
Yoon Byoung-Moon
Alanko Anita K
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
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