Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1992-12-18
1994-11-29
Quach, T. N.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156653, 156657, 437228, H01L 21306
Patent
active
053686845
ABSTRACT:
A magnetron discharge is generated by a high-frequency electric field and a magnetic field perpendicular to the electric field to generate a plasma of an etching gas, and an object to be processed having a silicon-containing layer represented by a polysilicon layer is exposed in the plasma to etch the silicon-containing layer. In this case, the etching gas mainly contains an HBr gas, a gas mixture of HBr and Cl.sub.2 gases, a gas mixture of HBr and HCl gases, or a gas obtained by adding an oxygen-containing gas such as an O.sub.2 gas to each of these gases.
REFERENCES:
patent: 4450042 (1984-05-01), Purdes
patent: 4490209 (1984-12-01), Hartman
patent: 4521275 (1985-06-01), Purdes
patent: 4799991 (1989-01-01), Dockrey
patent: 4983253 (1991-01-01), Wolfe et al.
patent: 5007982 (1991-04-01), Tsou
patent: 5106767 (1992-04-01), Comfort et al.
patent: 5242536 (1993-09-01), Schoenborn
Translation of Iizuka JP3-241829.
Hiratuka Masahito
Ishikawa Yoshio
Kojima Hiroshi
Quach T. N.
Tokyo Electron Limited
Tokyo Electron Yamanashi Limited
LandOfFree
Etching method for a silicon-containing layer using hydrogen bro does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Etching method for a silicon-containing layer using hydrogen bro, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Etching method for a silicon-containing layer using hydrogen bro will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-71599