Etching method employing positive photoresist film

Details Etching method employing positive photoresist film Etching method employing positive photoresist film

1985-07-23

1987-08-11

Kittle, J. E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430314, 430317, 430323, 430326, 430327, 430329, G03C 500

Patent

active

046861734

ABSTRACT:
An etching method is disclosed including a process of improving the adhesiveness between a positive resist layer and a material layer to be etched. The material layer to be etched is dipped in an organic solvent. The structural body thus-produced in the aforesaid process is placed in the atmosphere of Freon vapor to dry the material layer to be etched. The positive resist film is then formed on the surface of the material layer to be etched.

REFERENCES:
patent: 3942982 (1976-03-01), Yanazawa et al.
Kirk-Othmer, Encyclopedia of Chemical Technology, 2nd Edition, 1966, vol. 9, pp. 739-743.
Thompson et al., Introduction to Microlithography, Am. Chemical Soc., Washington, DC 1983.

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