Etching method and storage medium

Details Etching method and storage medium Etching method and storage medium

2007-05-24

2009-10-27

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C204S192250, C257SE21024, C257SE21033, C438S729000, C216S037000

Reexamination Certificate

active

07608544

ABSTRACT:
An etching method which makes it possible to obtain a desired etching shape with ease, and a computer-readable storage medium storing a program for implementing the method. The etching method is executed by a substrate processing apparatus that performs plasma processing on a semiconductor wafer by plasma. The apparatus comprises a substrate accommodating chamber for accommodating the semiconductor wafer which has an oxide film and a resist film formed on the oxide film, and an upper electrode plate disposed in the substrate accommodating chamber and exposed in a processing space in the substrate accommodating chamber. At least part of the upper electrode plate is formed of a silicon-containing material. The upper electrode plate is sputtered by plasma, and the oxide film is etched by plasma.

REFERENCES:
patent: 6124208 (2000-09-01), Park et al.
patent: 6811956 (2004-11-01), Gabriel
patent: 2003/0219683 (2003-11-01), Nagarajan et al.
patent: 2009/0020417 (2009-01-01), Kim et al.
patent: 3-174724 (1991-07-01), None

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