Etching method and plasma processing method

Details Etching method and plasma processing method Etching method and plasma processing method

2007-05-01

2007-05-01

Olsen, Allan (Department: 1763)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C216S072000, C216S079000, C438S710000, C438S714000, C438S724000, C438S725000, C438S744000

Reexamination Certificate

active

10902893

ABSTRACT:
A processing gas constituted of CH2F2, O2and Ar is introduced into a processing chamber102of a plasma processing apparatus100. The flow rate ratio of the constituents of the processing gas is set at CH2F2/O2/Ar=20 sccm/10 sccm/100 sccm. The pressure inside the processing chamber102is set at 50 mTorr. 500 W high frequency power with its frequency set at 13.56 MHz is applied to a lower electrode.108on which a wafer W is placed. The processing gas is raised to plasma and thus, an SiNxlayer206formed on a Cu layer204is etched. The exposed Cu layer204is hardly oxidized and C and F are not injected into it.

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