Etching method and method for forming contact opening

Details Etching method and method for forming contact opening Etching method and method for forming contact opening

2005-06-10

2008-10-07

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S725000, C257SE21038

Reexamination Certificate

active

07432194

ABSTRACT:
An etching method is described, including a first etching step and a second etching step. The temperature of the second etching step is higher than that of the first etching step, such that the after-etching-inspection (AEI) critical dimension is smaller than the after-development-inspection (ADI) critical dimension.

REFERENCES:
patent: 2003/0003714 (2003-01-01), Lee et al.
patent: 2006/0046495 (2006-03-01), Frohberg et al.

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