Etching method and manufacturing method of semiconductor device

Details Etching method and manufacturing method of semiconductor device Etching method and manufacturing method of semiconductor device

2011-01-25

2011-01-25

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S618000, C438S733000, C257SE29151

Reexamination Certificate

active

07875506

ABSTRACT:
The present invention discloses technique of etching selectively a layer containing siloxane. The present invention provides a semiconductor device with reduced operation deterioration due to etching failure. A method for manufacturing a semiconductor device comprises steps of forming a conductive layer electrically connecting to a transistor, an insulating layer covering the conductive layer, and a mask formed over the insulating layer; and etching the insulating layer with a processing gas including a hydrogen bromide gas.

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